Cypress NoBL CY7C1355C User Manual

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9-Mbit (256K x 36/512K x 18)
Flow-Through SRAM with NoBL™ Architecture
CY7C1355C
CY7C1357C
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 38-05539 Rev. *E Revised September 14, 2006
Features
No Bus Latency™ (NoBL™) architecture eliminates
dead cycles between write and read cycles
Can support up to 133-MHz bus operations with zero
wait states
Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT™
devices
Internally self-timed output buffer control to eliminate
the need to use OE
Registered inputs for flow-through operation
Byte Write capability
3.3V/2.5V I/O power supply (V
DDQ
)
Fast clock-to-output times
6.5 ns (for 133-MHz device)
Clock Enable (CEN
) pin to enable clock and suspend
operation
Synchronous self-timed writes
Asynchronous Output Enable
Available in JEDEC-standard and lead-free 100-Pin
TQFP, lead-free and non lead-free 119-Ball BGA
package and 165-Ball FBGA package
Three chip enables for simple depth expansion.
Automatic Power-down feature available using ZZ
mode or CE deselect
IEEE 1149.1 JTAG-Compatible Boundary Scan
Burst Capability—linear or interleaved burst order
Low standby power
Functional Description
[1]
The CY7C1355C/CY7C1357C is a 3.3V, 256K x 36/512K x 18
Synchronous Flow-through Burst SRAM designed specifically
to support unlimited true back-to-back Read/Write operations
without the insertion of wait states. The
CY7C1355C/CY7C1357C is equipped with the advanced No
Bus Latency (NoBL) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of data through the SRAM, especially in systems that require
frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN
) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by the two or four Byte Write
Select (BW
X
) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE
) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Selection Guide
133 MHz 100 MHz Unit
Maximum Access Time 6.5 7.5 ns
Maximum Operating Current 250 180 mA
Maximum CMOS Standby Current 40 40 mA
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
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Summary of Contents

Page 1 - 9-Mbit (256K x 36/512K x 18)

9-Mbit (256K x 36/512K x 18)Flow-Through SRAM with NoBL™ Architecture CY7C1355CCY7C1357CCypress Semiconductor Corporation • 198 Champion Court • San

Page 2

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 10 of 28NOP/WRITE ABORT (Begin Burst) None L H L L L L H X L L->H Tri-StateWRITE ABORT (Contin

Page 3

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 11 of 28IEEE 1149.1 Serial Boundary Scan (JTAG)The CY7C1355C/CY7C1357C incorporates a serial boun

Page 4

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 12 of 28Diagram. Upon power-up, the instruction register is loadedwith the IDCODE instruction. It

Page 5 - CY7C1355C (256K x 36)

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 13 of 28TAP Timing TAP AC Switching Characteristics Over the Operating Range[10, 11]Parameter Des

Page 6

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 14 of 283.3V TAP AC Test ConditionsInput pulse levels...

Page 7

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 15 of 28Scan Register SizesRegister Name Bit Size (x36) Bit Size (x18)Instruction 3 3Bypass 1 1ID

Page 8

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 16 of 28119-ball BGA Boundary Scan Order CY7C1355C (256K x 36) CY7C1357C (512K x 18)Bit# ball IDS

Page 9 - Truth Table

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 17 of 28165-ball FBGA Boundary Scan Order CY7C1355C (256K x 36) CY7C1357C (512K x 18)Bit# ball I

Page 10 - CY7C1357C

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 18 of 28Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not te

Page 11 - TAP Controller Block Diagram

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 19 of 28Capacitance[15]Parameter Description Test Conditions100 TQFPMax.119 BGAMax.165 FBGAMax. U

Page 12

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 2 of 2812CMODEBWABWBWECE1CE2CE3OEREAD LOGICDQsDQPADQPBDQPCDQPDMEMORYARRAYEINPUTREGISTERBWCBWDADDR

Page 13 - TAP Timing

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 20 of 28Switching Characteristics Over the Operating Range[16, 17]Parameter Description–133 –100U

Page 14

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 21 of 28Switching WaveformsRead/Write Waveforms[22, 23, 24]Notes: 22.For this waveform ZZ is tied

Page 15

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 22 of 28NOP, STALL and DESELECT Cycles[22, 23, 25]Note: 25.The IGNORE CLOCK EDGE or STALL cycle (

Page 16

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 23 of 28ZZ Mode Timing[26, 27]Notes: 26.Device must be deselected when entering ZZ mode. See trut

Page 17

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 24 of 28Ordering InformationNot all of the speed, package and temperature ranges are available. P

Page 18 - Operating Range

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 25 of 28Package Diagrams NOTE:1. JEDEC STD REF MS-0262. BODY LENGTH DIMENSION DOES NOT INCLUDE M

Page 19

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 26 of 28Package Diagrams (continued)1.2720.322165437LEABDCHGFKJUPNMTR12.0019.5030° TYP.2.40 MAX.

Page 20 - [+] Feedback

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 27 of 28© Cypress Semiconductor Corporation, 2006. The information contained herein is subject t

Page 21 - Switching Waveforms

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 28 of 28Document History PageDocument Title: CY7C1355C/CY7C1357C 9-Mbit (256K x 36/512K x 18) F

Page 22

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 3 of 28Pin Configurations 100-Pin TQFP PinoutAAAAA1A0NC/288MNC/144MVSSVDDNC/36MAAAAAADQPBDQBDQBVD

Page 23

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 4 of 28Pin Configurations (continued)100-Pin TQFP PinoutAAAAA1A0NC/288MNC/144MVSSVDDNC/36MAAAAAA

Page 24

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 5 of 28Pin Configurations (continued)2345671ABCDEFGHJKLMNPRTUVDDQNC/576MNC/1GDQPCDQCDQDDQCDQDAA

Page 25

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 6 of 28Pin Configurations (continued)165-Ball FBGA Pinout (3 Chip enable with JTAG)CY7C1355C (25

Page 26

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 7 of 28Pin Definitions Name I/O DescriptionA0, A1, A Input-SynchronousAddress Inputs used to sele

Page 27

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 8 of 28Functional OverviewThe CY7C1355C/CY7C1357C is a synchronous flow-throughburst SRAM designe

Page 28

CY7C1355CCY7C1357CDocument #: 38-05539 Rev. *E Page 9 of 28precaution, DQs and DQPX are automatically tri-stated duringthe data portion of a write cy

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