CY7C1352G
Document #: 38-05514 Rev. *D Page 5 of 12
Interleaved Burst Address Table
(MODE = Floating or V
DD
)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00 01 10 11
01 00 11 10
10 11 00 01
11 10 01 00
Linear Burst Address Table (MODE = GND)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
Fourth
Address
A1, A0
00 01 10 11
01 10 11 00
10 11 00 01
11 00 01 10
ZZ Mode Electrical Characteristics
Parameter Description Test Conditions Min. Max. Unit
I
DDZZ
Snooze mode standby current ZZ > V
DD
− 0.2V 40 mA
t
ZZS
Device operation to ZZ ZZ > V
DD
− 0.2V 2t
CYC
ns
t
ZZREC
ZZ recovery time ZZ < 0.2V 2t
CYC
ns
t
ZZI
ZZ active to snooze current This parameter is sampled 2t
CYC
ns
t
RZZI
ZZ inactive to exit snooze current This parameter is sampled 0 ns
Truth Table
[2, 3, 4, 5, 6, 7, 8]
Operation
Address
Used CE ZZ ADV/LD WE BW
x
OE CEN CLK DQ
Deselect Cycle None H L L X X X L L-H Tri-State
Continue Deselect Cycle None X L H X X X L L-H Tri-State
Read Cycle (Begin Burst) External L L L H X L L L-H Data Out (Q)
Read Cycle (Continue Burst) Next X L H X X L L L-H Data Out (Q)
NOP/Dummy Read (Begin Burst) External L L L H X H L L-H Tri-State
Dummy Read (Continue Burst) Next X L H X X H L L-H Tri-State
Write Cycle (Begin Burst) External L L L L L X L L-H Data In (D)
Write Cycle (Continue Burst) Next X L H X L X L L-H Data In (D)
NOP/WRITE ABORT (Begin Burst) None L L L L H X L L-H Tri-State
WRITE ABORT (Continue Burst) Next X L H X H X L L-H Tri-State
IGNORE CLOCK EDGE (Stall) Current X L X X X X H L-H –
SNOOZE MODE None X H X X X X X X Tri-State
Truth Table for Read/Write
[2, 3]
Function
WE
BW
B
BW
A
Read H X X
Write − No bytes written L H H
Write Byte A − (DQ
A
and
DQP
A
)LHL
Write Byte B − (DQ
B
and
DQP
B
)LLH
Write All Bytes L L L
Notes:
2. X=”Don't Care.” H = Logic HIGH, L = Logic LOW. CE
stands for ALL Chip Enables active. BW
X
= L signifies at least one Byte Write Select is active, BW
X
= Valid
signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.
3. Write is defined by BW
[A:B]
, and WE. See Write Cycle Descriptions table.
4. When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
5. The DQ and DQP pins are controlled by the current cycle and the OE
signal. OE is asynchronous and is not sampled with the clock.
6. CEN
= H, inserts wait states.
7. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE
.
8. OE
is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP
[A:B]
= tri-state when
OE
is inactive or when the device is deselected, and DQs and DQP
[A:B]
= data when OE is active.
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