Cypress CY14B104M User Manual

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PRELIMINARY
CY14B104K, CY14B104M
4 Mbit (512K x 8/256K x 16) nvSRAM with
Real Time Clock
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-07103 Rev. *K Revised January 29, 2009
Features
20 ns, 25 ns, and 45 ns access times
Internally organized as 512K x 8 (CY14B104K) or 256K x 16
(CY14B104M)
Hands off automatic STORE on power down with only a small
capacitor
STORE to QuantumTrap
®
nonvolatile elements is initiated by
software, device pin, or AutoStore
®
on power down
RECALL to SRAM initiated by software or power up
High reliability
Infinite Read, Write, and RECALL cycles
200,000 STORE cycles to QuantumTrap
20 year data retention
Single 3V +20%, –10% operation
Data integrity of Cypress nvSRAM combined with full featured
Real Time Clock
Watchdog timer
Clock alarm with programmable interrupts
Capacitor or battery backup for RTC
Commercial and industrial temperatures
44 and 54-pin TSOP II package
Pb-free and RoHS compliance
Functional Description
The Cypress CY14B104K/CY14B104M combines a 4-Mbit
nonvolatile static RAM with a full featured Real Time Clock in a
monolithic integrated circuit. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world’s most reliable nonvolatile memory. The SRAM is read and
written infinite number of times, while independent nonvolatile
data resides in the nonvolatile elements.
The Real Time Clock function provides an accurate clock with
leap year tracking and a programmable, high accuracy oscillator.
The alarm function is programmable for periodic minutes, hours,
days or months alarms. There is also a programmable watchdog
timer for process control.
STATIC RAM
ARRAY
2048 X 2048
R
O
W
D
E
C
O
D
E
R
COLUMN I/O
COLUMN DEC
I
N
P
U
T
B
U
F
F
E
R
S
POWER
CONTROL
STORE/RECALL
CONTROL
Quatrum
Trap
2048 X 2048
STORE
RECALL
V
CC
V
CA
P
HSB
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
SOFTWARE
DETECT
A
14
-A
2
OE
CE
WE
BHE
BLE
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
17
A
18
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
DQ
9
DQ
10
DQ
11
DQ
12
DQ
13
DQ
14
DQ
15
RTC
MUX A
18
-A
0
X
1
X
2
INT
V
RTCbat
V
RTCcap
Logic Block Diagram
[1, 2, 3]
Notes
1. Address A
0
- A
18
for x8 configuration and Address A
0
- A
17
for x16 configuration.
2. Data DQ
0
- DQ
7
for x8 configuration and Data DQ
0
- DQ
15
for x16 configuration.
3. BHE
and BLE are applicable for x16 configuration only.
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Summary of Contents

Page 1 - Real Time Clock

PRELIMINARYCY14B104K, CY14B104M4 Mbit (512K x 8/256K x 16) nvSRAM withReal Time ClockCypress Semiconductor Corporation • 198 Champion Court • San Jose

Page 2

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 10 of 31Table 4. RTC Register Map[8]Register BCD Format Data[9]Function/RangeCY14B1

Page 3

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 11 of 31Table 5. Register Map DetailRegisterDescriptionCY14B104K CY14B104M0x7FFFF 0

Page 4

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 12 of 31RegisterDescriptionCY14B104K CY14B104M0x7FFF8 0x3FFF8Calibration/ControlD7 D

Page 5

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 13 of 31RegisterDescriptionCY14B104K CY14B104M0x7FFF4 0x3FFF4Alarm - HoursD7 D6 D5 D

Page 6

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 14 of 31Maximum RatingsExceeding maximum ratings may impair the useful life of thede

Page 7 - Watchdog Timer

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 15 of 31AC Test ConditionsInput Pulse Levels ...

Page 8

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 16 of 31Table 6. RTC Characteristics Parameters Description Test Conditions Min Typ

Page 9

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 17 of 31AC Switching Characteristics ParametersDescription20 ns 25 ns 45 nsUnitCypre

Page 10 - CY14B104K, CY14B104M

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 18 of 31Switching WaveformsFigure 8. SRAM Read Cycle 2: CE Controlled[3, 16, 20] Fi

Page 11

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 19 of 31Switching WaveformsFigure 10. SRAM Write Cycle 2: CE Controlled[3, 19, 20,

Page 12

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 2 of 31PinoutsFigure 1. Pin Diagram - 44-PIn and 54-Pin TSOP II Table 1. Pin Defin

Page 13

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 20 of 31AutoStore/Power Up RECALLParameters Description20 ns 25 ns 45 nsUnitMin Max

Page 14

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 21 of 31Software Controlled STORE and RECALL Cycle In the following table, the softw

Page 15

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 22 of 31Hardware STORE CycleParameters Description20 ns 25 ns 45 nsUnitMin Max Min M

Page 16

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 23 of 31Truth Table For SRAM OperationsHSB should remain HIGH for SRAM Operations.Fo

Page 17

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 24 of 31Part Numbering NomenclatureOption:T - Tape & ReelBlank - Std.Speed:20 -

Page 18

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 25 of 31Ordering InformationSpeed(ns)Ordering CodePackageDiagramPackage TypeOperatin

Page 19

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 26 of 31Package Diagrams Figure 17. 44-Pin TSOP II (51-85087)MAXMIN.DIMENSION IN MM

Page 20

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 27 of 31Figure 18. 54-Pin TSOP II (51-85160)Package Diagrams (continued)51-85160 *

Page 21

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 28 of 31Document History PageDocument Title: CY14B104K/CY14B104M 4 Mbit (512K x 8/25

Page 22

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 29 of 31*F 1890926 See ECN vsutmp8/AE-SAAdded Footnote 1, 2 and 3.Updated Logic Bloc

Page 23 - For x16 Configuration

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 3 of 31Device OperationThe CY14B104K/CY14B104M nvSRAM is made up of twofunctional co

Page 24

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 30 of 31*I 2519319 06/20/08 GVCH/PYRS Added 20 ns access speed in “Features”Added IC

Page 25

Document #: 001-07103 Rev. *K Revised January 29, 2009 Page 31 of 31AutoStore and QuantumTrap are registered trademarks of Cypress Semiconductor Corpo

Page 26

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 4 of 31power-on-recall, the MPU must be active or the WE held inactiveuntil the MPU

Page 27

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 5 of 31Preventing AutoStoreThe AutoStore function is disabled by initiating an AutoS

Page 28

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 6 of 31Data ProtectionThe CY14B104K/CY14B104M protects data from corruptionduring lo

Page 29

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 7 of 31must be set to ‘1’. This turns off the oscillator circuit, extendingthe batte

Page 30

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 8 of 31New time out values are written by setting the watchdog write bitto ‘0’. When

Page 31 - PSoC Solutions

PRELIMINARYCY14B104K, CY14B104MDocument #: 001-07103 Rev. *K Page 9 of 31Figure 4. RTC Recommended Component Configuration Figure 5. Interrupt Block

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