Cypress CY7C1471BV25 User Manual

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72-Mbit (2M x 36/4M x 18/1M x 72)
Flow-Through SRAM with NoBL™ Architecture
CY7C1471BV25
CY7C1473BV25, CY7C1475BV25
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-15013 Rev. *E Revised February 29, 2008
Features
No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
Supports up to 133 MHz bus operations with zero wait states
Data transfers on every clock
Pin compatible and functionally equivalent to ZBT™ devices
Internally self timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte Write capability
2.5V IO supply (V
DDQ
)
Fast clock-to-output times
6.5 ns (for 133-MHz device)
Clock Enable (CEN) pin to enable clock and suspend operation
Synchronous self timed writes
Asynchronous Output Enable (OE)
CY7C1471BV25, CY7C1473BV25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1475BV25
available in Pb-free and non-Pb-free 209-ball FBGA package.
Three Chip Enables (CE
1
, CE
2
, CE
3
) for simple depth
expansion.
Automatic power down feature available using ZZ mode or CE
deselect.
IEEE 1149.1 JTAG Boundary Scan compatible
Burst Capability - linear or interleaved burst order
Low standby power
Functional Description
The CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25
are 2.5V, 2M x 36/4M x 18/1M x 72 synchronous flow through
burst SRAMs designed specifically to support unlimited true
back-to-back read or write operations without the insertion of
wait states. The CY7C1471BV25, CY7C1473BV25, and
CY7C1475BV25 are equipped with the advanced No Bus
Latency (NoBL) logic required to enable consecutive read or
write operations with data transferred on every clock cycle. This
feature dramatically improves the throughput of data through the
SRAM, especially in systems that require frequent write-read
transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
Clock Enable (CEN
) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133-MHz device).
Write operations are controlled by two or four Byte Write Select
(BW
X
) and a Write Enable (WE) input. All writes are conducted
with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE
) provide easy bank selection
and output tri-state control. To avoid bus contention, the output
drivers are synchronously tri-stated during the data portion of a
write sequence.
For best practice recommendations, refer to the Cypress appli-
cation note AN1064, SRAM System Guidelines.
Selection Guide
Description 133 MHz 100 MHz Unit
Maximum Access Time 6.5 8.5 ns
Maximum Operating Current 305 275 mA
Maximum CMOS Standby Current 120 120 mA
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Summary of Contents

Page 1 - CY7C1473BV25, CY7C1475BV25

72-Mbit (2M x 36/4M x 18/1M x 72)Flow-Through SRAM with NoBL™ ArchitectureCY7C1471BV25CY7C1473BV25, CY7C1475BV25Cypress Semiconductor Corporation • 19

Page 2

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 10 of 30included to greatly simplify read/modify/write sequences, whichcan be

Page 3 - [+] Feedback

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 11 of 30Table 4. Truth Table The truth table for CY7C1471BV25, CY7C1473BV25,

Page 4 - Pin Configurations

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 12 of 30Table 5. Truth Table for Read/Write The read-write truth table for C

Page 5 - CY7C1473BV25

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 13 of 30IEEE 1149.1 Serial Boundary Scan (JTAG)The CY7C1471BV25, CY7C1473BV25

Page 6 - CY7C1473BV25 (4M x 18)

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 14 of 30TAP RegistersRegisters are connected between the TDI and TDO balls an

Page 7 - CY7C1475BV25 (1M × 72)

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 15 of 30no guarantee as to the value that is captured. Repeatable resultsmay

Page 8

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 16 of 302.5V TAP AC Test ConditionsInput pulse levels...

Page 9

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 17 of 30Table 8. Identification Register DefinitionsInstruction FieldCY7C147

Page 10

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 18 of 30Table 11. Boundary Scan Exit Order (2M x 36)Bit # 165-Ball ID Bit #

Page 11

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 19 of 30Table 13. Boundary Scan Exit Order (1M x 72) Bit # 209-Ball ID Bit #

Page 12

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 2 of 30Logic Block Diagram – CY7C1471BV25 (2M x 36)Logic Block Diagram – CY7C

Page 13

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 20 of 30Maximum RatingsExceeding maximum ratings may impair the useful life o

Page 14

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 21 of 30CapacitanceTested initially and after any design or process change th

Page 15

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 22 of 30Switching Characteristics Over the Operating Range. Timing reference

Page 16

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 23 of 30Switching WaveformsFigure 8 shows read-write timing waveform.[19, 20,

Page 17

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 24 of 30Figure 9 shows NOP, STALL and DESELECT Cycles waveform.[19, 20, 22]Fi

Page 18

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 25 of 30Figure 10 shows ZZ Mode timing waveform.[23, 24]Figure 10. ZZ Mode T

Page 19

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 26 of 30Ordering InformationNot all of the speed, package and temperature ran

Page 20

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 27 of 30Package Diagrams Figure 11. 100-Pin Thin Plastic Quad Flatpack (14 x

Page 21

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 28 of 30Figure 12. 165-Ball FBGA (15 x 17 x 1.4 mm), 51-85165Package Diagram

Page 22 - Switching Characteristics

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 29 of 30Figure 13. 209-Ball FBGA (14 x 22 x 1.76 mm), 51-85167Package Diagra

Page 23

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 3 of 30Logic Block Diagram – CY7C1475BV25 (1M x 72)A0, A1, ACMODECE1CE2CE3OER

Page 24

Document #: 001-15013 Rev. *E Revised February 29, 2008 Page 30 of 30NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT

Page 25

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 4 of 30Pin Configurations AAAAA1A0NC/288MNC/144MVSSVDDAAAAAADQPBDQBDQBVDDQVSS

Page 26

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 5 of 30Pin Configurations (continued)AAAAA1A0NC/288MNC/144MVSSVDDAAAAAAANCNC

Page 27

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 6 of 30Pin Configurations (continued)165-Ball FBGA (15 x 17 x 1.4 mm) Pinout

Page 28

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 7 of 30Pin Configurations (continued)ABCDEFGHJKLMNPRTUVW123456789 1110DQgDQg

Page 29

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 8 of 30Table 1. Pin DefinitionsName IO DescriptionA0, A1, A Input-Synchronou

Page 30

CY7C1471BV25CY7C1473BV25, CY7C1475BV25Document #: 001-15013 Rev. *E Page 9 of 30Functional OverviewThe CY7C1471BV25, CY7C1473BV25, and CY7C1475BV25are

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