Cypress CY14B101Q1 User Manual

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PRELIMINARY
1 Mbit (128K x 8) Serial SPI nvSRAM
CY14B101Q1
CY14B101Q2
CY14B101Q3
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 001-50091 Rev. *A Revised February 2, 2009
Features
1 Mbit NonVolatile SRAM
Internally organized as 128K x 8
STORE to QuantumTrap
®
nonvolatile elements initiated au-
tomatically on power down (AutoStore
®
) or by user using
HSB pin (Hardware Store) or SPI instruction (Software Store)
RECALL to SRAM initiated on power up (Power Up Recall
®
)
or by SPI Instruction (Software RECALL)
Automatic STORE on power down with a small capacitor
High Reliability
Infinite Read, Write, and RECALLl cycles
200,000 STORE cycles to QuantumTrap
Data Retention: 20 Years
High Speed Serial Peripheral Interface (SPI)
40 MHz Clock rate
Supports SPI Modes 0 (0,0) and 3 (1,1)
Write Protection
Hardware Protection using Write Protect (WP) Pin
Software Protection using Write Disable Instruction
Software Block Protection for 1/4,1/2, or entire Array
Low Power Consumption
Single 3V +20%, –10% operation
Average Vcc current of 10 mA at 40 MHz operation
Industry Standard Configurations
Commercial and industrial temperatures
CY14B101Q1 has identical pin configuration to industry stan-
dard 8-pin NV Memory
8-pin DFN and 16-pin SOIC Packages
RoHS compliant
Functional Overview
The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3
combines a 1 Mbit nonvolatile static RAM with a nonvolatile
element in each memory cell. The memory is organized as 128K
words of 8 bits each. The embedded nonvolatile elements incor-
porate the QuantumTrap technology, creating the world’s most
reliable nonvolatile memory. The SRAM provides infinite read
and write cycles, while the QuantumTrap cell provides highly
reliable nonvolatile storage of data. Data transfers from SRAM to
the nonvolatile elements (STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM from the nonvolatile memory (RECALL operation).
Both STORE and RECALL operations can also be triggered by
the user.
Instruction
register
Address
Decoder
Data I/O register
Status register
Power Control
STORE/RECALL
Control
Instruction decode
Write protect
Control logic
Quantum Trap
STORE
RECALL
SI
SCK
V
CC
V
CAP
SO
HSB
128K X 8
SRAM ARRAY
128K X 8
A0-A16
D0-D7
HOLD
CS
WP
Logic Block Diagram
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Summary of Contents

Page 1 - CY14B101Q3

PRELIMINARY1 Mbit (128K x 8) Serial SPI nvSRAMCY14B101Q1CY14B101Q2CY14B101Q3Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 9513

Page 2

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 10 of 22Write Protect (WP) Pin The write protect pin (WP) is used to provi

Page 3

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 11 of 22nvSRAM Special InstructionsCY14B101Q1/CY14B101Q2/CY14B101Q3 provid

Page 4

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 12 of 22bit is cleared on the positive edge of CS following the STOREinstr

Page 5 - SPI Overview

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 13 of 22Maximum RatingsExceeding maximum ratings may shorten the useful li

Page 6

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 14 of 22AC Test ConditionsInput Pulse Levels...

Page 7 - Power On Reset

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 15 of 22AC Switching Characteristics CypressParameterAlt.ParameterDescript

Page 8

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 16 of 22AutoStore or Power Up RECALLParameters DescriptionCY‘4B101QxAUnitM

Page 9

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 17 of 22Software Controlled STORE and RECALL Cycles Parameter DescriptionC

Page 10

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 18 of 22 Hardware STORE CycleParameter DescriptionCY14B101Q1UnitMin MaxtD

Page 11

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 19 of 22Ordering InformationOrdering CodePackageDiagramPackage TypeOperati

Page 12

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 2 of 22PinoutsFigure 1. Pin Diagram - 8-Pin DFN[1, 2, 3]Figure 2. Pin Di

Page 13

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 20 of 22Package Diagrams Figure 27. 8-Pin (300 mil) DFN Package (001-506

Page 14

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 21 of 22Figure 28. 16-Pin (300 mil) SOIC (51-85022)Package Diagrams (cont

Page 15

Document #: 001-50091 Rev. *A Revised February 2, 2009 Page 22 of 22AutoStore and QuantumTrap are trademarks of Cypress Semiconductor Corp. All produc

Page 16

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 3 of 22Device Operation CY14B101Q1/CY14B101Q2/CY14B101Q3 is 1 Mbit nvSRAMm

Page 17

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 4 of 22capacitor (VCAP) and enables the device to safely STORE thedata in

Page 18

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 5 of 22Note CY14B101Q2/CY14B101Q3 has AutoStore Enabled fromthe factory. I

Page 19

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 6 of 22SPI ModesCY14B101Q1/CY14B101Q2/CY14B101Q3 may be driven by amicroco

Page 20

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 7 of 22SPI Operating FeaturesPower UpPower up is defined as the condition

Page 21

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 8 of 22Status RegisterThe status register bits are listed in Ta b le 3 . T

Page 22 - PSoC Solutions

PRELIMINARYCY14B101Q1CY14B101Q2CY14B101Q3Document #: 001-50091 Rev. *A Page 9 of 22Write Protection and Block ProtectionCY14B101Q1/CY14B101Q2/CY14B101

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