Cypress NoBL CY7C1470BV25 User Manual Page 7

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CY7C1470BV25
CY7C1472BV25, CY7C1474BV25
Document #: 001-15032 Rev. *D Page 7 of 29
Table 1. Pin Definitions
Pin Name IO Type Pin Description
A0
A1
A
Input-
Synchronous
Address Inputs Used to Select One of the Address Locations. Sampled at the rising edge of the
CLK.
BW
a
BW
b
BW
c
BW
d
BW
e
BW
f
BW
g
BW
h
Input-
Synchronous
Byte Write Select Inputs, Active LOW. Qualified with WE to conduct writes to the SRAM. Sampled
on the rising edge of CLK. BW
a
controls DQ
a
and DQP
a
, BW
b
controls DQ
b
and DQP
b
, BW
c
controls
DQ
c
and DQP
c
, BW
d
controls DQ
d
and DQP
d
, BW
e
controls DQ
e
and DQP
e,
BW
f
controls DQ
f
and
DQP
f,
BW
g
controls DQ
g
and DQP
g,
BW
h
controls DQ
h
and DQP
h
.
WE
Input-
Synchronous
Write Enable Input, Active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This
signal must be asserted LOW to initiate a write sequence.
ADV/LD Input-
Synchronous
Advance/Load Input Used to Advance the On-Chip Address Counter or Load a New Address.
When HIGH (and CEN
is asserted LOW) the internal burst counter is advanced. When LOW, a new
address can be loaded into the device for an access. After being deselected, ADV/LD
must be driven
LOW to load a new address.
CLK Input-
Clock
Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK
is only recognized if CEN
is active LOW.
CE
1
Input-
Synchronous
Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE
2
and CE
3
to select/deselect the device.
CE
2
Input-
Synchronous
Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with
CE
1
and CE
3
to select/deselect the device.
CE
3
Input-
Synchronous
Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE
1
and
CE
2
to select/deselect the device.
OE
Input-
Asynchronous
Output Enable, Active LOW. Combined with the synchronous logic block inside the device to control
the direction of the IO pins. When LOW, the IO pins can behave as outputs. When deasserted HIGH,
IO pins are tri-stated, and act as input data pins. OE is masked during the data portion of a write
sequence, during the first clock when emerging from a deselected state and when the device has
been deselected.
CEN
Input-
Synchronous
Clock Enable Input, Active LOW. When asserted LOW the clock signal is recognized by the SRAM.
When deasserted HIGH the clock signal is masked. Since deasserting CEN
does not deselect the
device, CEN
can be used to extend the previous cycle when required.
DQ
s
IO-
Synchronous
Bidirectional Data IO Lines. As inputs, they feed into an on-chip data register that is triggered by
the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified
by A
[18:0]
during the previous clock rise of the read cycle. The direction of the pins is controlled by
OE
and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When
HIGH, DQ
a
–DQ
h
are placed in a tri-state condition. The outputs are automatically tri-stated during
the data portion of a write sequence, during the first clock when emerging from a deselected state, and
when the device is deselected, regardless of the state of OE
.
DQP
X
IO-
Synchronous
Bidirectional Data Parity IO Lines. Functionally, these signals are identical to DQ
[71:0]
. During write
sequences, DQP
a
is controlled by BW
a
, DQP
b
is controlled by BW
b
, DQP
c
is controlled by BW
c
, and
DQP
d
is controlled by BW
d
, DQP
e
is controlled by BW
e,
DQP
f
is controlled by BW
f,
DQP
g
is controlled
by BW
g,
DQP
h
is controlled by BW
h
.
MODE Input Strap Pin Mode Input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order.
Pulled LOW selects the linear burst order. MODE must not change states during operation. When
left floating MODE defaults HIGH, to an interleaved burst order.
TDO JTAG Serial
Output
Synchronous
Serial Data Out to the JTAG Circuit. Delivers data on the negative edge of TCK.
TDI JTAG Serial Input
Synchronous
Serial Data In to the JTAG Circuit. Sampled on the rising edge of TCK.
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