Cypress CY7C1319CV18 User Manual

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18-Mbit DDR-II SRAM 4-Word
Burst Architecture
CY7C1317CV18, CY7C1917CV18
CY7C1319CV18, CY7C1321CV18
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 001-07161 Rev. *D Revised June 18, 2008
Features
18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
300 MHz clock for high bandwidth
4-word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) at 300 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Synchronous internally self-timed writes
DDR-II operates with 1.5 cycle read latency when the DLL is
enabled
Operates similar to a DDR-I device with 1 cycle read latency in
DLL off mode
1.8V core power supply with HSTL inputs and outputs
Variable drive HSTL output buffers
Expanded HSTL output voltage (1.4V–V
DD
)
Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1317CV18 – 2M x 8
CY7C1917CV18 – 2M x 9
CY7C1319CV18 – 1M x 18
CY7C1321CV18 – 512K x 36
Functional Description
The CY7C1317CV18, CY7C1917CV18, CY7C1319CV18, and
CY7C1321CV18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II architecture. The DDR-II consists of an
SRAM core with advanced synchronous peripheral circuitry and
a two-bit burst counter. Addresses for read and write are latched
on alternate rising edges of the input (K) clock. Write data is
registered on the rising edges of both K and K
. Read data is
driven on the rising edges of C and C
if provided, or on the rising
edge of K and K
if C/C are not provided. Each address location
is associated with four 8-bit words in the case of CY7C1317CV18
and four 9-bit words in the case of CY7C1917CV18 that burst
sequentially into or out of the device. The burst counter always
starts with a ‘00’ internally in the case of CY7C1317CV18 and
CY7C1917CV18. For CY7C1319CV18 and CY7C1321CV18,
the burst counter takes in the least two significant bits of the
external address and bursts four 18-bit words in the case of
CY7C1319CV18, and four 36-bit words in the case of
CY7C1321CV18, sequentially into or out of the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs, D) are tightly matched to the two
output echo clocks CQ/CQ
, eliminating the need to capture data
separately from each individual DDR SRAM in the system
design. Output data clocks (C/C) enable maximum system
clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K
input clocks. All data outputs pass through output
registers controlled by the C or C
(or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description 300 MHz 278 MHz 250 MHz 200 MHz 167 MHz Unit
Maximum Operating Frequency 300 278 250 200 167 MHz
Maximum Operating Current x8 770 720 670 580 515 mA
x9 770 720 670 580 515
x18 810 760 700 600 540
x36 890 830 765 655 600
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Summary of Contents

Page 1 - Burst Architecture

18-Mbit DDR-II SRAM 4-WordBurst ArchitectureCY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Cypress Semiconductor Corporation • 198 Champion Court

Page 2

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 10 of 31Application ExampleFigure 1 shows two DDR-II used

Page 3

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 11 of 31Burst Address Table (CY7C1319CV18, CY7C1321CV18)Fi

Page 4

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 12 of 31Write Cycle DescriptionsThe write cycle descriptio

Page 5

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 13 of 31IEEE 1149.1 Serial Boundary Scan (JTAG)These SRAMs

Page 6

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 14 of 31IDCODEThe IDCODE instruction loads a vendor-specif

Page 7

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 15 of 31TAP Controller State DiagramThe state diagram for

Page 8

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 16 of 31TAP Controller Block DiagramTAP Electrical Charact

Page 9

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 17 of 31TAP AC Switching Characteristics Over the Operatin

Page 10 - CY7C1319CV18, CY7C1321CV18

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 18 of 31Identification Register Definitions Instruction Fi

Page 11

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 19 of 31Boundary Scan Order Bit # Bump ID Bit # Bump ID Bi

Page 12

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 2 of 31Logic Block Diagram (CY7C1317CV18)Logic Block Diagr

Page 13

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 20 of 31Power Up Sequence in DDR-II SRAMDDR-II SRAMs must

Page 14

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 21 of 31Maximum RatingsExceeding maximum ratings may impai

Page 15

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 22 of 31IDD [19]VDD Operating Supply VDD = Max,IOUT = 0 mA

Page 16

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 23 of 31CapacitanceTested initially and after any design o

Page 17 - [+] Feedback

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 24 of 31Switching CharacteristicsOver the Operating Range

Page 18

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 25 of 31Output TimestCOtCHQVC/C Clock Rise (or K/K in sing

Page 19

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 26 of 31Switching WaveformsFigure 5. Read/Write/Deselect

Page 20 - DLL Constraints

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 27 of 31Ordering Information Not all of the speed, package

Page 21

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 28 of 31250 CY7C1317CV18-250BZC 51-85180 165-Ball Fine Pit

Page 22

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 29 of 31167 CY7C1317CV18-167BZC 51-85180 165-Ball Fine Pit

Page 23 - Thermal Resistance

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 3 of 31Logic Block Diagram (CY7C1319CV18)Logic Block Diagr

Page 24

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 30 of 31Package DiagramFigure 6. 165-Ball FBGA (13 x 15 x

Page 25

Document Number: 001-07161 Rev. *D Revised June 18, 2008 Page 31 of 31QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by

Page 26

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 4 of 31Pin Configuration The pin configuration for CY7C131

Page 27

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 5 of 31CY7C1319CV18 (1M x 18)1 2 3 4 5 6 7 8 9 10 11A CQ N

Page 28

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 6 of 31Pin Definitions Pin Name IO Pin DescriptionDQ[x:0]I

Page 29

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 7 of 31CQ Output Clock CQ Referenced with Respect to C. Th

Page 30 - Package Diagram

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 8 of 31Functional OverviewThe CY7C1317CV18, CY7C1917CV18,

Page 31

CY7C1317CV18, CY7C1917CV18CY7C1319CV18, CY7C1321CV18Document Number: 001-07161 Rev. *D Page 9 of 31after the read(s), the stored data from the earlier

Related models: CY7C1321CV18 | CY7C1317CV18 |

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