Cypress CY62146DV30 User Manual

4-Mbit (256K x 16) Static RAMCY62146DV30Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600Document #: 38

CY62146DV30Document #: 38-05339 Rev. *A Page 10 of 11© Cypress Semiconductor Corporation, 2005. The information contained herein is subject to chang

CY62146DV30Document #: 38-05339 Rev. *A Page 11 of 11Document History PageDocument Title:CY62146DV30 MoBL® 4-Mbit (256K x 16) Static RAMDocument Numb

CY62146DV30Document #: 38-05339 Rev. *A Page 2 of 11 Notes: 2. NC pins are not internally connected on the die.3. DNU pins have to be left floating o

CY62146DV30Document #: 38-05339 Rev. *A Page 3 of 11Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.)St

CY62146DV30Document #: 38-05339 Rev. *A Page 4 of 11 Capacitance (for all packages)[9]Parameter Description Test Conditions Max. UnitCINInput Capacit

CY62146DV30Document #: 38-05339 Rev. *A Page 5 of 11Switching Characteristics Over the Operating Range[12]Parameter Description45 ns[10]55 ns 70 nsUn

CY62146DV30Document #: 38-05339 Rev. *A Page 6 of 11Switching WaveformsRead Cycle 1 (Address Transition Controlled)[16, 17]Read Cycle No. 2 (OE Contr

CY62146DV30Document #: 38-05339 Rev. *A Page 7 of 11Write Cycle No. 1 (WE Controlled)[15, 19, 20]Write Cycle No. 2 (CE Controlled)[15, 19, 20]Notes:

CY62146DV30Document #: 38-05339 Rev. *A Page 8 of 11Write Cycle No. 3 (WE Controlled, OE LOW)[20]Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[20]Sw

CY62146DV30Document #: 38-05339 Rev. *A Page 9 of 11Truth TableCE WE OE BHE BLE Inputs/Outputs Mode PowerH X X X X High Z Deselect/Power-Down Standby