Cypress CY7C1245V18 User Manual

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CY7C1241V18, CY7C1256V18
CY7C1243V18, CY7C1245V18
36-Mbit QDR™-II+ SRAM 4-Word Burst
Architecture (2.0 Cycle Read Latency)
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document Number: 001-06365 Rev. *D Revised March 12, 2008
Features
Separate independent read and write data ports
Supports concurrent transactions
300 MHz to 375 MHz clock for high bandwidth
4-Word Burst for reducing address bus frequency
Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 750 MHz) at 375 MHz
Read latency of 2.0 clock cycles
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Single multiplexed address input bus latches address inputs
for both read and write ports
Separate Port Selects for depth expansion
Data valid pin (QVLD) to indicate valid data on the output
Synchronous internally self-timed writes
Available in x8, x9, x18, and x36 configurations
Full data coherency providing most current data
Core V
DD
= 1.8V ± 0.1V; IO V
DDQ
= 1.4V to V
DD
[1]
HSTL inputs and variable drive HSTL output buffers
Available in 165-ball FBGA package (15 x 17 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configurations
With Read Cycle Latency of 2.0 cycles:
CY7C1241V18 – 4M x 8
CY7C1256V18 – 4M x 9
CY7C1243V18 – 2M x 18
CY7C1245V18 – 1M x 36
Functional Description
The CY7C1241V18, CY7C1256V18, CY7C1243V18, and
CY7C1245V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with Quad Data Rate-II+ (QDR-II+) architecture.
QDR-II+ architecture consists of two separate ports to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR-II+ architecture has
separate data inputs and data outputs to completely eliminate
the need to “turn around” the data bus required with common IO
devices. Each port can be accessed through a common address
bus. Read and write addresses are latched on alternate rising
edges of the input (K) clock. Accesses to the QDR-II+ read and
write ports are completely independent of one another. To
maximize data throughput, both read and write ports are
equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with four 8-bit words
(CY7C1241V18), 9-bit words (CY7C1256V18), 18-bit words
(CY7C1243V18), or 36-bit words (CY7C1245V18), that burst
sequentially into or out of the device. Because data can be trans-
ferred into and out of the device on every rising edge of both input
clocks (K and K
), memory bandwidth is maximized while simpli-
fying system design by eliminating bus “turn-arounds”.
Depth expansion is accomplished with Port Selects for each port.
Port selects enable each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K
input clocks. All data outputs pass through output
registers controlled by the K or K
input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
Selection Guide
Description 375 MHz 333 MHz 300 MHz Unit
Maximum Operating Frequency 375 333 300 MHz
Maximum Operating Current 1240 1120 1040 mA
Note
1. The QDR consortium specification for V
DDQ
is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting
V
DDQ
= 1.4V to V
DD
.
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Summary of Contents

Page 1 - CY7C1243V18, CY7C1245V18

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18 36-Mbit QDR™-II+ SRAM 4-Word BurstArchitecture (2.0 Cycle Read Latency)Cypress Semiconductor Corporat

Page 2

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 10 of 28Application ExampleFigure 1 shows the use of 4 QDR-II+

Page 3

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 11 of 28Write Cycle Descriptions The write cycle description t

Page 4

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 12 of 28Write Cycle Descriptions The write cycle description t

Page 5

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 13 of 28IEEE 1149.1 Serial Boundary Scan (JTAG)These SRAMs inc

Page 6

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 14 of 28IDCODEThe IDCODE instruction loads a vendor-specific,

Page 7

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 15 of 28TAP Controller State DiagramThe state diagram for the

Page 8

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 16 of 28TAP Controller Block DiagramTAP Electrical Characteris

Page 9

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 17 of 28TAP AC Switching Characteristics Over the Operating Ra

Page 10

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 18 of 28Identification Register Definitions Instruction FieldV

Page 11

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 19 of 28Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit #

Page 12

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 2 of 28Logic Block Diagram (CY7C1241V18)Logic Block Diagram (C

Page 13

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 20 of 28Power Up Sequence in QDR-II+ SRAMQDR-II+ SRAMs must be

Page 14

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 21 of 28Maximum Ratings Exceeding maximum ratings may shorten

Page 15

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 22 of 28CapacitanceTested initially and after any design or pr

Page 16

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 23 of 28Switching Characteristics Over the Operating Range[22,

Page 17

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 24 of 28Switching WaveformsFigure 4. Read/Write/Deselect Seque

Page 18

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 25 of 28Ordering Information Not all of the speed, package and

Page 19

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 26 of 28300 CY7C1241V18-300BZC 51-85195 165-ball Fine Pitch Ba

Page 20

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 27 of 28Package DiagramFigure 5. 165-ball FBGA (15 x 17 x 1.40

Page 21

Document Number: 001-06365 Rev. *D Revised March 12, 2008 Page 28 of 28QDR™ is a trademark of Cypress Semiconductor Corp. QDR RAMs and Quad Data Rate

Page 22

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 3 of 28Logic Block Diagram (CY7C1243V18)Logic Block Diagram (C

Page 23

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 4 of 28Pin ConfigurationsCY7C1241V18 (4M x 8)165-Ball FBGA (15

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CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 5 of 28Pin Configurations (continued)CY7C1243V18 (2M x 18)165-

Page 25

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 6 of 28Pin DefinitionsPin Name IO Pin DescriptionD[x:0]Input-S

Page 26

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 7 of 28CQ Echo Clock Synchronous Echo Clock Outputs. This is a

Page 27

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 8 of 28Functional OverviewThe CY7C1241V18, CY7C1256V18, CY7C12

Page 28

CY7C1241V18, CY7C1256V18CY7C1243V18, CY7C1245V18Document Number: 001-06365 Rev. *D Page 9 of 28Depth ExpansionThe CY7C1243V18 has a Port Select input

Related models: CY7C1256V18 | CY7C1243V18 |

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